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Datasheet IRF640T Equivalent ( PDF )

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1 IRF640T   N-CHANNEL POWER MOSFETS

IRF640T N-channel 200V - 0.15Ω - 15A - TO-220 MESH OVERLAY™ Power MOSFET General features Type IRF640T ■ ■ ■ VDSS 200V RDS(on) <0.16Ω ID 15A Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances TO-220 3 1 2 Description This Power
 ST Microelectronics
ST Microelectronics		 datasheet IRF640T pdf

IRF6 Datasheet ( Hoja de datos ) - resultados coincidentes

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IRF630A

N-Channel MOSFET Transistor

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630A DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage: VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·Fast Switching Speed ·Low Drive Requir
 Inchange Semiconductor
Inchange Semiconductor		 datasheet pdf - Inchange Semiconductor
IRF630

200V/9A POWER MOSFET

200V/9A POWER MOSFET (N-Channel) IRF630/IRFS630 200V/9A Power MOSFET (N-Channel) General Description • IRF630/IRFS630 are N-Channel enhancement mode power MOSFETs with advanced technology. These power MOSFETs are designed for low voltage, high speed power switching applications
 TAITRON
TAITRON		 datasheet pdf - TAITRON
IRF640

200V N-Channel MOSFET

IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of e
 Fairchild Semiconductor
Fairchild Semiconductor		 datasheet pdf - Fairchild Semiconductor


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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