Datasheet IRF640NPBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRF640NPBF	Power MOSFET ( Transistor ) l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Dl esLceraidp-tFiorene Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techn	International Rectifier

IRF640N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRF640N	Power MOSFET ( Transistor ) l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced process	International Rectifier
IRF640NS	Power MOSFET ( Transistor ) l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced process	International Rectifier
IRF640NPBF	Power MOSFET ( Transistor ) l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Dl esLceraidp-tFiorene Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advan	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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