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IRF640FI 전자부품 데이터시트



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기능 검색 결과



IRF640FI  

Inchange Semiconductor
Inchange Semiconductor

IRF640FI

N-Channel Mosfet Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF640FI FEATURES ·Low RDS(on) = 0.180Ω(TYP) ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology DESCRIPTION ·D




관련 부품 IRF640 상세설명

IRF640L  

  
Power MOSFET ( Transistor )

www.vishay.com IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 70 13 39 Single 0.18 I2PAK (TO-262) D2PAK (TO-26 D G DS G D S G S N-Channel MOSFET FEATURES • Surface



Vishay
Vishay

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IRF640NSPBF  

  
Power MOSFET ( Transistor )

l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Dl esLceraidp-tFiorene Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techn



International Rectifier
International Rectifier

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IRF640T  

  
N-CHANNEL POWER MOSFETS

IRF640T N-channel 200V - 0.15Ω - 15A - TO-220 MESH OVERLAY™ Power MOSFET General features Type IRF640T ■ ■ ■ VDSS 200V RDS(on) <0.16Ω ID 15A Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances TO-220 3 1 2 Description This Power



ST Microelectronics
ST Microelectronics

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IRF640S  

  
Power MOSFET ( Transistor )

www.vishay.com IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 70 13 39 Single 0.18 I2PAK (TO-262) D2PAK (TO-26 D G DS G D S G S N-Channel MOSFET FEATURES • Surface



Vishay
Vishay

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IRF640S  

  
Power MOSFET(Vdss=200V/ Rds(on)=0.18ohm/ Id=18A)

PD -90902B IRF640S/L HEXFET® Power MOSFET l l l l l l l Surface Mount (IRF640S) Low-profile through-hole (IRF640L) Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 200V RDS(on) = 0.18Ω G S ID = 18A Descriptio



International Rectifier
International Rectifier

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IRF640PBF  

  
N-Channel Type Power MOSFET

IRF640PBF ® IRF640PBF Pb Free Plating Product Pb 18A,200V Heatsink N-Channel Type Power MOSFET Features ̰ RDS(on) (Max 0.18 ˟ )@VGS=10V ̰ Gate Charge (Typical 44nC) ̰ Improved dv/dt Capability ̰ High ruggedness ̰ 100% Avalanche Tested 1.Gate 2.Drain 3.Source BVDSS = 200V RDS(ON) = 0.1



Thinki Semiconductor
Thinki Semiconductor

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