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www.vishay.com IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 70 13 39 Single 0.18 I2PAK (TO-262) D2PAK (TO-26 D G DS G D S G S N-Channel MOSFET FEATURES • Surface
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Dl esLceraidp-tFiorene Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techn
IRF640T N-channel 200V - 0.15Ω - 15A - TO-220 MESH OVERLAY™ Power MOSFET General features Type IRF640T ■ ■ ■ VDSS 200V RDS(on) <0.16Ω ID 15A Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances TO-220 3 1 2 Description This Power
www.vishay.com IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 70 13 39 Single 0.18 I2PAK (TO-262) D2PAK (TO-26 D G DS G D S G S N-Channel MOSFET FEATURES • Surface
PD -90902B IRF640S/L HEXFET® Power MOSFET l l l l l l l Surface Mount (IRF640S) Low-profile through-hole (IRF640L) Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 200V RDS(on) = 0.18Ω G S ID = 18A Descriptio
IRF640PBF ® IRF640PBF Pb Free Plating Product Pb 18A,200V Heatsink N-Channel Type Power MOSFET Features ̰ RDS(on) (Max 0.18 ˟ )@VGS=10V ̰ Gate Charge (Typical 44nC) ̰ Improved dv/dt Capability ̰ High ruggedness ̰ 100% Avalanche Tested 1.Gate 2.Drain 3.Source BVDSS = 200V RDS(ON) = 0.1
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