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IRF640B  

Fairchild Semiconductor
Fairchild Semiconductor

IRF640B

200V N-Channel MOSFET

IRF640B/IRFS640B November 2001 IRF640B/IRFS640B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been




관련 부품 IRF64 상세설명

IRF644NS  

  
Power MOSFET ( Transistor )

IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) 250 V RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 54 Qgs (nC) 9.2 Qgd (nC) 26 Configuration Single 0.240 I2PAK (TO-262) TO-220 D S D G D2PAK (TO-263) S D G G GD S S N-Cha



Vishay
Vishay

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IRF640L  

  
Power MOSFET ( Transistor )

www.vishay.com IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 70 13 39 Single 0.18 I2PAK (TO-262) D2PAK (TO-26 D G DS G D S G S N-Channel MOSFET FEATURES • Surface



Vishay
Vishay

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IRF644NS  

  
Power MOSFET ( Transistor )

l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free (only the TO-220AB version is currently available in a Deslecardi-pfrteieonconfiguration) Fifth Generation HEXFET



International Rectifier
International Rectifier

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IRF644NPbF  

  
Power MOSFET ( Transistor )

l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free (only the TO-220AB version is currently available in a Deslecardi-pfrteieonconfiguration) Fifth Generation HEXFET



International Rectifier
International Rectifier

PDF



IRF644NL  

  
Power MOSFET ( Transistor )

IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) 250 V RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 54 Qgs (nC) 9.2 Qgd (nC) 26 Configuration Single 0.240 I2PAK (TO-262) TO-220 D S D G D2PAK (TO-263) S D G G GD S S N-Cha



Vishay
Vishay

PDF



IRF644NL  

  
Power MOSFET ( Transistor )

l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free (only the TO-220AB version is currently available in a Deslecardi-pfrteieonconfiguration) Fifth Generation HEXFET



International Rectifier
International Rectifier

PDF




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