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Datasheet IRF640A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRF640A | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF640A
FEATURES ·Low RDS(on) = 0.144Ω(TYP) ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology
DESCRIPTION ·Designed for use in switch mode power supp |
 Inchange Semiconductor |
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| 2 | IRF640A | N-Channel Power MOSFET / Transistor SEMICONDUCTOR
IRF640 Series RRooHHSS
DESCRIPTION
Nell High Power Products
N-Channel Power MOSFET (18A, 200Volts)
The Nell IRF640 are N-channel enhancement mode silicon gate power field effect transistors.
They are designed, tested and guaranteed to withstand level of energy in breakdown avalanch |
 nELL |
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| 1 | IRF640A | Advanced Power MOSFET Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 Ω(Typ.)
1 2 3
IRF640A
BVDSS = 200 V RDS(on) = 0.18 Ω ID = 18 |
 Fairchild Semiconductor |
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