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Power MOSFET IRF634S, SiHF634S Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 41 6.5 22 Single 0.45 D2PAK (TO-263) K DS G D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free N
PD - 95342 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description l l Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced pro
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 34 Qgs (nC) 6.5 Qgd (nC) 16 Configuration Single 0.435 I2PAK (TO-262) TO-220 D S D G S D GG D2PAK (TO-263) S N-Channel MOS
PD - 95342 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description l l Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced pro
PD - 95342 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description l l Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced pro
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 34 Qgs (nC) 6.5 Qgd (nC) 16 Configuration Single 0.435 I2PAK (TO-262) TO-220 D S D G S D GG D2PAK (TO-263) S N-Channel MOS
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