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IRF630S 전자부품 데이터시트



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IRF630S  

STMicroelectronics
STMicroelectronics

IRF630S

N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET

® IRF630S N - CHANNEL 200V - 0.35Ω - 9A - D2PAK MESH OVERLAY ™ MOSFET TYPE IRF630S s s s s s s V DSS 200 V R DS(on) < 0.40 Ω ID 9 A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GA



IRF630S  

NXP Semiconductors
NXP Semiconductors

IRF630S

N-channel TrenchMOS transistor

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF630, IRF630S FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID =



IRF630S  

Vishay
Vishay

IRF630S

Power MOSFET ( Transistor )

Power MOSFET IRF630S, SiHF630S Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 43 7.0 23 Single 0.40 D2PAK (TO-263) K DS G D G S N-Channel MOSFET FEATURES • Halogen-free According t



IRF630S  

New Jersey Semiconductor
New Jersey Semiconductor

IRF630S

Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK




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