IRF630S
STMicroelectronics
N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET®
IRF630S
N - CHANNEL 200V - 0.35Ω - 9A - D2PAK MESH OVERLAY ™ MOSFET
TYPE IRF630S
s s s s s s
V DSS 200 V
R DS(on) < 0.40 Ω
ID 9 A
TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GA
IRF630S
NXP Semiconductors
N-channel TrenchMOS transistorPhilips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
IRF630, IRF630S
FEATURES
• ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance
SYMBOL
d
QUICK REFERENCE DATA VDSS = 200 V ID =
IRF630S
Vishay
Power MOSFET ( Transistor )Power MOSFET
IRF630S, SiHF630S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
200 VGS = 10 V
43 7.0 23 Single
0.40
D2PAK (TO-263) K
DS G
D
G S
N-Channel MOSFET
FEATURES • Halogen-free According t