파트넘버.co.kr IRF630N 데이터시트 검색

IRF630N 전자부품 데이터시트



IRF630N 전자부품 회로 및
기능 검색 결과



IRF630N  

International Rectifier
International Rectifier

IRF630N

Power MOSFET(Vdss=200V/ Rds(on)=0.30ohm/ Id=9.3A)

PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l l HEXFET® Power MOSFET D VDSS = 2



IRF630N  

New Jersey Semiconductor
New Jersey Semiconductor

IRF630N

Trans MOSFET N-CH 200V 9.3A 3-Pin(3+Tab) TO-220AB




IRF630NL  

International Rectifier
International Rectifier

IRF630NL

Power MOSFET(Vdss=200V/ Rds(on)=0.30ohm/ Id=9.3A)

PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l l HEXFET® Power MOSFET D VDSS = 2



IRF630NLPBF  

International Rectifier
International Rectifier

IRF630NLPBF

HEXFET Power MOSFET

PD - 95047 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description l l IRF630NPbF IRF630NSPbF IRF6



IRF630NPBF  

International Rectifier
International Rectifier

IRF630NPBF

HEXFET Power MOSFET

PD - 95047 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description l l IRF630NPbF IRF630NSPbF IRF6



IRF630NS  

International Rectifier
International Rectifier

IRF630NS

Power MOSFET(Vdss=200V/ Rds(on)=0.30ohm/ Id=9.3A)

PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l l HEXFET® Power MOSFET D VDSS = 2



IRF630NSPBF  

International Rectifier
International Rectifier

IRF630NSPBF

HEXFET Power MOSFET

PD - 95047 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description l l IRF630NPbF IRF630NSPbF IRF6



IRF630NSTRR  

New Jersey Semiconductor
New Jersey Semiconductor

IRF630NSTRR

Trans MOSFET N-CH 200V 9.3A 3-Pin(2+Tab) D2PAK T/R




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