IRF630N
International Rectifier
Power MOSFET(Vdss=200V/ Rds(on)=0.30ohm/ Id=9.3A)PD - 94005A
IRF630N IRF630NS IRF630NL
Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description
l l
HEXFET® Power MOSFET
D
VDSS = 2
IRF630NL
International Rectifier
Power MOSFET(Vdss=200V/ Rds(on)=0.30ohm/ Id=9.3A)PD - 94005A
IRF630N IRF630NS IRF630NL
Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description
l l
HEXFET® Power MOSFET
D
VDSS = 2
IRF630NLPBF
International Rectifier
HEXFET Power MOSFET
PD - 95047
Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description
l l
IRF630NPbF IRF630NSPbF IRF6
IRF630NPBF
International Rectifier
HEXFET Power MOSFET
PD - 95047
Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description
l l
IRF630NPbF IRF630NSPbF IRF6
IRF630NS
International Rectifier
Power MOSFET(Vdss=200V/ Rds(on)=0.30ohm/ Id=9.3A)PD - 94005A
IRF630N IRF630NS IRF630NL
Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description
l l
HEXFET® Power MOSFET
D
VDSS = 2
IRF630NSPBF
International Rectifier
HEXFET Power MOSFET
PD - 95047
Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description
l l
IRF630NPbF IRF630NSPbF IRF6