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Datasheet IRF630MFP Equivalent ( PDF )

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1 IRF630MFP   N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET

N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE IRF630M IRF630FPM s s s s IRF630M IRF630MFP VDSS 200 V 200 V RDS(on) < 0.40 Ω < 0.40 Ω ID 9A 9A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHAR
 ST Microelectronics
ST Microelectronics		 datasheet IRF630MFP pdf

IRF630 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
IRF630A

N-Channel MOSFET Transistor

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630A DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage: VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·Fast Switching Speed ·Low Drive Requir
 Inchange Semiconductor
Inchange Semiconductor		 datasheet pdf - Inchange Semiconductor
IRF630

200V/9A POWER MOSFET

200V/9A POWER MOSFET (N-Channel) IRF630/IRFS630 200V/9A Power MOSFET (N-Channel) General Description • IRF630/IRFS630 are N-Channel enhancement mode power MOSFETs with advanced technology. These power MOSFETs are designed for low voltage, high speed power switching applications
 TAITRON
TAITRON		 datasheet pdf - TAITRON
IRF630

9A, 200V, N-Channel Power MOSFET

Data Sheet IRF630, RF1S630SM January 2002 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in
Fairchild Semiconductor
Fairchild Semiconductor		 datasheet pdf - Fairchild Semiconductor


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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