IRF630FP
STMicroelectronics
N-CHANNEL MOSFETIRF630 IRF630FP
N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay™ II Power MOSFET
General features
Type IRF630 IRF630FP
VDSS 200V 200V
RDS(on) <0.40Ω <0.40Ω
■ Extremely high dv/dt capability ■ Very low intrinsic capacitances ■ Gate c
IRF630FI
N-Channel Mosfet TransistorINCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES ·RDS(on) =0.4Ω ·6A and 200V ·single pulse avalanche energy rated ·SOA is Power- Dissipation Limited ·Linear Transfer Characteristics ·High Input Impedance
isc Product Specification
IRF630FI
·DESCRITION ·Designed for high sp
Inchange Semiconductor
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IRF630FI
N-CHANNEL MOSFETThis Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Material Copyrighted By Its Respective Manufacturer
This Mater
STMicroelectronics
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IRF630S
Power MOSFET ( Transistor )Power MOSFET
IRF630S, SiHF630S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
200 VGS = 10 V
43 7.0 23 Single
0.40
D2PAK (TO-263) K
DS G
D
G S
N-Channel MOSFET
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • Surface
Vishay
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