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Datasheet IRF630A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IRF630A | N-Channel Power MOSFET / Transistor SEMICONDUCTOR
IRF630 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(9A, 200Volts)
DESCRIPTION
The Nell IRF630 are N-channel enhancement mode silicon gate power field effect transistors.
They are designed, tested and guaranteed to withstand level of energy in breakdown avalanch |
 nELL |
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| 3 | IRF630A | Advanced Power MOSFET Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.333 Ω (Typ.)
1 2 3
IRF630A
BVDSS = 200 V RDS(on) = 0.4 Ω ID = 9 A
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 Fairchild Semiconductor |
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| 2 | IRF630A | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc Product Specification
isc N-Channel MOSFET Transistor
IRF630A
DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage: VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·Fast Switching Speed ·Low Drive Requirement APPLICATIONS |
 Inchange Semiconductor |
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| 1 | IRF630A | Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220 |
 New Jersey Semiconductor |
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