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Datasheet IRF630 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 41 | IRF630 | N-CHANNEL MOSFET |
 BLUE ROCKET ELECTRONICS |
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| 40 | IRF630 | N-channel mosfet transistor MOSFET
IRF630
N-channel mosfet transistor
INCHANGE
Features
With TO-220 package Low on-state and thermal resistance Fast switching V DSS=200V; RDS(ON)0.4 ;I D=9A 1.gate 2.drain 3.source
Absolute Maximum Ratings Tc=25
SYMBOL VDSS VGS ID Ptot Tj Tstg
PARAMETER Drain-source voltage (VGS=0) Ga |
 Inchange Semiconductor |
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| 39 | IRF630 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.
▼ Ease of Paralleling ▼ Fast Switching Characteristic ▼ Simple Drive Requirement
IRF630
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS
200V
RDS(ON)
0.4Ω
G ID 9.0A
S
Description
APEC MOSFET provide the power designer with the bes |
 Advanced Power Electronics |
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| 38 | IRF630 | Power MOSFET ( Transistor ) IRF630
Power MOSFET
VDSS = 200V, RDS(on) = 0.40 ohm, ID = 9.0 A
Drain
D
Gate Drain Source
N Channel
G S
Symbol
ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise
Parameter
Symbol
Test Conditions
Drain to Source Breakdown Voltage Drain to Source Leakage Current
Gate t |
 TRANSYS |
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