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Datasheet IRF621 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 19 | IRF621 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements
isc Product Specification
IRF621
·DESCRITION ·Designed for high speed applications,
such as switching power supplies , AC |
 Inchange Semiconductor |
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| 18 | IRF621 | N-Channel Power MOSFETs/ 7A/ 150-200V |
 Fairchild Semiconductor |
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| 17 | IRF6215 | HEXFET Power MOSFET PD - 91479B
IRF6215
HEXFET® Power MOSFET
Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description
l l
D
VDSS = -150V
G S
RDS(on) = 0.29Ω ID = -13A
Fifth Generation HEXFETs from International Rectifier uti |
 International Rectifier |
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| 16 | IRF6215L | (IRF6215L/S) HEXFET Power MOSFET
PD - 91643
IRF6215S/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF6215S) l Low-profile through-hole (IRF6215L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description
l l
D
VDSS = -150V RDS(on) = 0.29Ω
G
ID = |
International Rectifier |
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