IRF620FI
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSIRF620 IRF620FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE IRF620 IRF620FI
s s s s
V DSS 200 V 200 V
R DS( on) < 0.8 Ω < 0.8 Ω
ID 6A 4A
TYPICAL RDS(on) = 0.55 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA
IRF620FI
Inchange Semiconductor
N-Channel Mosfet TransistorINCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements
isc Product Specification
IRF620FI
·DESCRITION ·Designed for high speed applicati