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Datasheet IRF620A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRF620A | Advanced Power MOSFET Advanced Power MOSFET
IRF620A
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.626 Ω(Typ.)
Absolute Maximum Ratings
Symbol VDSS
ID
IDM V |
 Fairchild Semiconductor |
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| 2 | IRF620A | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF620A
FEATURES ·Low RDS(on) = 0.626Ω(TYP) ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology
DESCRIPTION ·Designed for use in switch mode power suppli |
 Inchange Semiconductor |
|
| 1 | IRF620A | Power MOSFET ( Transistor ) Advanced Power MOSFET
IRF620A
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.626 Ω(Typ.)
Absolute Maximum Ratings
Symbol VDSS
ID
IDM V |
Fairchild Semiconductor |
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