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Datasheet IRF6100 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | IRF6100 | HEXFET Power MOSFET l Ultra Low RDS(on) per Footprint Area l Low Thermal Resistance
l P-Channel MOSFET l One-third Footprint of SOT-23 l Super Low Profile (<.8mm) l Available Tested on Tape & Reel
VDSS
-20V
PD - 93930F
IRF6100
HEXFET® Power MOSFET
RDS(on) max
0.065Ω@VGS = -4.5V
0.095Ω@VGS = -2.5V
ID
-5.1A
-4 |
International Rectifier |
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1 | IRF6100PBF | HEXFET Power MOSFET PD - 96012B
IRF6100PbF
HEXFET® Power MOSFET
l l l l l l l
Ultra Low RDS(on) per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel Lead-Free
VDSS
-20V
RDS(on) max
0.065Ω@VGS = -4.5V 0.095Ω@VGS = -2.5 |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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