Datasheet IRF5810PBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRF5810PBF	Power MOSFET ( Transistor ) l Ultra Low On-Resistance l Dual P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance	International Rectifier

IRF5810 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRF5810PbF	Power MOSFET ( Transistor ) l Ultra Low On-Resistance l Dual P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremel	International Rectifier
IRF5810	Power MOSFET(Vdss=-20V) PD -94198 IRF5810 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS -20V RDS(on) max (mΩ) 90@VGS = -4.5V 135@VGS = -2.5V ID -2.9A -2.3A Description These P-channel HEXFET® Power MOSFE	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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