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Datasheet IRF5810 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | IRF5810 | Power MOSFET(Vdss=-20V) PD -94198
IRF5810
HEXFET® Power MOSFET
l l l l l
Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge
VDSS
-20V
RDS(on) max (mΩ)
90@VGS = -4.5V 135@VGS = -2.5V
ID
-2.9A -2.3A
Description
These P-channel HEXFET® Power MOSFETs from Internationa |
International Rectifier |
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1 | IRF5810PbF | Power MOSFET ( Transistor ) l Ultra Low On-Resistance l Dual P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free
Description
These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance |
International Rectifier |
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Sanken |
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