Datasheet IRF540NS Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRF540NS	Power MOSFET ( Transistor ) l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc	International Rectifier

IRF54 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRF540	Power MOSFET ( Transistor ) IRF540, SiHF540 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 72 11 32 Single D FEATURES 100 0.077 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature •F ast	Vishay
IRF540N	33A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFET IRF540N TM Data Sheet March 2000 File Number 4842 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Features • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER	Intersil Corporation
IRF540	HEXFET POWER MOSFET	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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