파트넘버.co.kr IRF530A 데이터시트 검색

IRF530A 전자부품 데이터시트



IRF530A 전자부품 회로 및
기능 검색 결과



IRF530A  

Fairchild Semiconductor
Fairchild Semiconductor

IRF530A

Advanced Power MOSFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.




관련 부품 IRF53 상세설명

IRF530N  

  
Trans MOSFET N-CH 100V 17A 3-Pin(3+Tab) TO-220AB



New Jersey Semiconductor
New Jersey Semiconductor

PDF



IRF532R  

  
(IRF530 - IRF533) N-Channel Power MOSFETs Avalanche Energy Rated



Harris Corporation
Harris Corporation

PDF



IRF532R  

  
(IRF530 - IRF533) N-Channel Power MOSFETs Avalanche Energy Rated



Harris Corporation
Harris Corporation

PDF



IRF530L  

  
Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)

PD - 91352A IRF530NS/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRF530NS) Low-profile through-hole (IRF530NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS =100V G S RDS(on) = 0.11Ω ID = 17A Description Fifth Generation HEXFETs f



International Rectifier
International Rectifier

PDF



IRF532  

  
Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220



New Jersey Semiconductor
New Jersey Semiconductor

PDF



IRF530FI  

  
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR



STMicroelectronics
STMicroelectronics

PDF




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