IRF530A
Fairchild Semiconductor
Advanced Power MOSFETAdvanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.
IRF530L
Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)PD - 91352A
IRF530NS/L
HEXFET® Power MOSFET
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Advanced Process Technology Surface Mount (IRF530NS) Low-profile through-hole (IRF530NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS =100V
G S
RDS(on) = 0.11Ω ID = 17A
Description
Fifth Generation HEXFETs f
International Rectifier
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