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Datasheet IRF530 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 39 | IRF530 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF530
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements
·DESCRITION ·Designed especially for high voltage,high speed applications,
such as off- |
 Inchange Semiconductor |
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| 38 | IRF530 | N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
 Motorola Inc |
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| 37 | IRF530 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IRF530
N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
IRF530
100 V <0.16 Ω
14 A
s TYPICAL RDS(on) = 0.115Ω s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
3
s 175 oC OPERATING |
 STMicroelectronics |
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| 36 | IRF530 | N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
 TRSYS |
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