IRF520FI
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSIRF520 IRF520FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE IRF520 IRF520FI
s s s s s s s
V DSS 100 V 100 V
R DS( on) < 0.27 Ω < 0.27 Ω
ID 10 A 7A
TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALA
IRF520FI
Inchange Semiconductor
N-Channel MOSFET TransistorINCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES ·Typical RDS(on) =0.23Ω ·Avalanche Rugged Technology ·High Current Capability ·Low Gate Charge ·175℃ Operating Temperature
isc Product Specification
IRF520FI
·DESCRITION ·High Curren