IRF520
Intersil Corporation
9.2A/ 100V/ 0.270 Ohm/ N-Channel Power MOSFETIRF520
Data Sheet November 1999 File Number 1574.4
9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified
IRF520
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSIRF520 IRF520FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE IRF520 IRF520FI
s s s s s s s
V DSS 100 V 100 V
R DS( on) < 0.27 Ω < 0.27 Ω
ID 10 A 7A
TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALA
IRF520
Fairchild Semiconductor
N-Channel Power MOSFETs/ 11 A/ 60-100 VData Sheet
January 2002
IRF520
9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy i
IRF520
Vishay
Power MOSFET ( Transistor )Power MOSFET
IRF520, SiHF520
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 10 V
16 4.4 7.7 Single
0.27
TO-220AB
D
S D G
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
IRF520A
Fairchild Semiconductor
Advanced Power MOSFETAdvanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.