IRF510
Harris Corporation
(IRF510 - IRF513) N-Channel Power MOSFETs
Semiconductor
IRF510, IRF511, IRF512, IRF513
4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power M
IRF510
Vishay
100V, 5.6A, Power MOSFETPower MOSFET
IRF510, SiHF510
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 10 V
8.3 2.3 3.8 Single
0.54
TO-220AB
D
G
S D G
ORDERING INFORMATION
Package Lead (Pb)-free SnPb
S N-Channel
IRF510
Intersil Corporation
5.6A/ 100V/ 0.540 Ohm/ N-Channel Power MOSFETIRF510
Data Sheet November 1999 File Number 1573.4
5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified
IRF510
Inchange Semiconductor
N-Channel MOSFET TransistorINCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF510
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements
·DESCRITION ·Designed especially for high volta
IRF510
Fairchild Semiconductor
N-Channel Power MOSFET / TransistorData Sheet
January 2002
IRF510
5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy i