IRF450
Fairchild Semiconductor
13A/ 500V/ 0.400 Ohm/ N-Channel Power MOSFETIRF450
Data Sheet March 1999 File Number
1827.3
13A, 500V, 0.400 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified lev
IRF450
Intersil Corporation
13A/ 500V/ 0.400 Ohm/ N-Channel Power MOSFETIRF450
Data Sheet March 1999 File Number
1827.3
13A, 500V, 0.400 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified lev
IRF450
Inchange Semiconductor
N-Channel MOSFET TransistorINCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF450
DESCRIPTION ·13A,500V ·RDS(on)=0.4Ω ·SOA is Power Dissipation Limited ·Linear Transfer Characteristics ·Related Literature
APPLICATIONS ·Designed for applications
IRF450
Seme LAB
N-CHANNEL POWER MOSFETIRF450
MECHANICAL DATA Dimensions in mm (inches)
39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655)
N–CHANNEL POWER MOSFET
1
11.18 (0.440) 10.67 (0.420)
26.67 (1.050) max.
4.09 (0.161) 3.84 (0.151) dia. 2 plcs.
2
VDSS ID(cont)
IRF450
International Rectifier
TRANSISTORS N-CHANNEL(Vdss=500V/ Rds(on)=0.400ohm/ Id=12A)PD - 90330F
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number IRF450 BVDSS 500V RDS(on) 0.400Ω ID 12A
IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL
The HEXFETtechnology is the key to I