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Datasheet IRF440 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 8 | IRF440 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF440
DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speeds ·IDSS,VDS(on),SOA and VGS(th) specified at Elevated
temperature ·Rugged
APPLICATIONS ·Designed especially for high voltage,high spee |
 Inchange Semiconductor |
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| 7 | IRF440 | N-CHANNEL POWER MOSFETS |
 Samsung semiconductor |
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| 6 | IRF440 | 8A/ 500V/ 0.850 Ohm/ N-Channel Power MOSFET IRF440
Data Sheet March 1999 File Number
2308.3
8A, 500V, 0.850 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche m |
 Intersil Corporation |
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| 5 | IRF440 | TRANSISTORS N-CHANNEL(Vdss=500V/ Rds(on)=0.85ohm/ Id=8.0A) PD - 90372A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number BVDSS RDS(on) IRF440 500V 0.85Ω ID 8.0A
IRF440 500V, N-CHANNEL
The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistor |
 International Rectifier |
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