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Datasheet IRF430 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 10 | IRF430 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF430
DESCRIPTION ·silicon Gate for fast switching at elevate ·rugged ·low drive requirements ·ease of paralleling
APPLICATIONS ·high speed applications such as
Switching power supplies,AC and DCmotor controls |
 Inchange Semiconductor |
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| 9 | IRF430 | N-CHANNEL POWER MOSFETS |
 Samsung semiconductor |
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| 8 | IRF430 | N-CHANNEL POWER MOSFET IRF430
MECHANICAL DATA Dimensions in mm (inches)
40.01 (1.575) Max.
N–CHANNEL POWER MOSFET
26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls.
22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 30.40 (1.197) 29.90 (1.177) 12.19 (0.48) 11.18 (0.44)
1.63 (0.064) 1.52 (0.060)
V |
 Seme LAB |
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| 7 | IRF430 | 4.5A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET IRF430
Data Sheet March 1999 File Number
1572.4
4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche |
 Intersil Corporation |
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