Datasheet IRF3710PBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRF3710PBF	HEXFET Power MOSFET PD - 94954 IRF3710PbF HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS(on) = 23mΩ G S ID = 57A Description Advanced HEXFET® Power MOSFET	International Rectifier

IRF3710 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRF3710	N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF3710 ·FEATURES ·Drain Current –ID=57A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 25mΩ(Max) ·DESCRITION ·Designed for high effcienc	Inchange Semiconductor
IRF3710	Power MOSFET ( Transistor ) PD - 91309C l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated IRF3710 HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 23mΩ G ID = 57A S Description Advanced HEXFET® Power MOSF	International Rectifier
IRF3710	N-Channel Power MOSFET / Transistor SEMICONDUCTOR IRF3710 Series RRooHHSS DESCRIPTION Nell High Power Products N-Channel Power MOSFET (57A, 100Volts) The Nell IRF3710 are N-channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy	nELL

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