IRF341
Inchange Semiconductor
N-Channel MOSFET TransistorINCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF341
DESCRIPTION ·Silicon Gate for Fast Switching Speed ·Rugged
APPLICATIONS ·High voltage ·High speed application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VA
IRF341
ART CHIP
N-Channel Power MOSFETsIRF340-343/IRF740-743 T-39-13 MTM8N35/8N40
N-Channel Power MOSFETs 10A, 350V/400V
Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies
IRF3415
International Rectifier
Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A)PD - 91477D
IRF3415
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 150V
G S
RDS(on) = 0.042Ω ID = 43A
Description
Fifth Generation HEXFETs from
IRF3415L
International Rectifier
Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A)PD - 91509C
IRF3415S/L
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Surface Mount (IRF3415S) Low-profile through-hole (IRF3415L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 150V RDS(on) = 0.042Ω
G
ID = 43