IRF250
ETC
(IRF150 - IRF500) 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSEDPOWER SOLUTION - NIKKOHM 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
IRN50-IRN150 IRF150-IRF500
Features and Applications
Non-inductive, flat shaped aluminum housed wire wound fixed resistors with 50W to 500W.. Minimum resistance
IRF250
Intersil Corporation
30A/ 200V/ 0.085 Ohm/ N-Channel Power MOSFETIRF250
Data Sheet March 1999 File Number
1825.3
30A, 200V, 0.085 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is designed, tested and guaranteed to withstand a specified level of energy in the breakd
IRF250
International Rectifier
HEXFET TRANSISTORSPD - 90338E
IRF250
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFETTRANSISTORS
JANTX2N6766 JANTXV2N6766
THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543]
200V, N-CHANNEL
Product Summary
Part Number BVDSS
IRF250
200V
RDS(on) 0.085Ω
ID 30A
The HEXFET�
IRF250
Inchange Semiconductor
N-Channel MOSFET TransistorINCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF250
DESCRIPTION ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =0.085Ω(Max) ·Nanosecond Switchi
IRF250
Seme LAB
N-CHANNEL POWER MOSFETIRF250
MECHANICAL DATA Dimensions in mm (inches)
39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655)
N–CHANNEL POWER MOSFET
VDSS ID(cont) RDS(on)
FEATURES
• HERMETICALLY SEALED TO–3 METAL PACKAGE
7.87 (0.310) 6.99 (0.275)
1
20.