IRF230
Intersil Corporation
8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETsSemiconductor
IRF230, IRF231, IRF232, IRF233
8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested
IRF230
International Rectifier
HEXFET TRANSISTORSPD - 90334F
IRF230
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFETTRANSISTORS
JANTX2N6758 JANTXV2N6758
THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]
200V, N-CHANNEL
Product Summary
Part Number BVDSS
IRF230
200V
RDS(on) 0.40Ω
ID 9.0A
The HEXFET�
IRF230
Seme LAB
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETIRF230
TO–3 (TO–204AA) Package Outline.
Dimensions in mm (inches)
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET
22.23 (0.875) max.
38.61 (1.5
IRF230
Inchange Semiconductor
N-Channel MOSFET TransistorINCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF230
DESCRIPTION ·Drain Current ID= 9A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.40Ω(Max) ·High Power, High Spee