Datasheet IRF140SMD Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRF140SMD	N-CHANNEL POWER MOSFET LAB MECHANICAL DATA Dimensions in mm (inches) SEME IRF140SMD N–CHANNEL POWER MOSFET 3 .6 0 (0 .1 4 2 ) M a x . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 3 0 .7 6 (0 .0 3 0 ) m in . VDSS ID(c	Seme LAB

IRF140 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRF1404	N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF1404 FEATURES ·Drain Current –ID= 162A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.004Ω(Max) ·Fast Switching Description Seventh Ge	Inchange Semiconductor
IRF1404	Power MOSFET ( Transistor ) l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Automotive Qualified (Q101) Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced	International Rectifier
IRF1407	Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A) PD - 93907 AUTOMOTIVE MOSFET Typical Applications q q IRF1407 HEXFET® Power MOSFET D Integrated Starter Alternator 42 Volts Automotive Electrical Systems Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repet	International Rectifier

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