IRF140
Intersil Corporation
28A/ 100V/ 0.077 Ohm/ N-Channel Power MOSFETIRF140
Data Sheet March 1999 File Number
2306.3
28A, 100V, 0.077 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified lev
IRF140
Inchange Semiconductor
N-Channel MOSFET TransistorINCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF140
DESCRIPTION ·Drain Current ID=27A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =0.085Ω(Max) ·High Power,High Speed
IRF140
Seme LAB
N-CHANNEL POWER MOSFETIRF140
MECHANICAL DATA Dimensions in mm (inches)
39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655)
N–CHANNEL POWER MOSFET
VDSS ID(cont) RDS(on)
FEATURES
• HERMETICALLY SEALED TO–3 METAL PACKAGE
1
20.32 (0.800) 18.80 (0.740) d
IRF140
International Rectifier
TRANSISTORS N-CHANNEL(Vdss=100V/ Rds(on)=0.077ohm/ Id=28A)PD - 90369
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number IRF140 BVDSS 100V RDS(on) 0.077Ω ID 28A
IRF140 100V, N-CHANNEL
The HEXFET technology is the key to International Rectifier�