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Datasheet IRF054 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IRF054 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF054
DESCRIPTION ·Drain Current ID=45A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.05Ω(Max) ·Simple Drive Requirements
APPLICATIONS ·Switching power supp |
 Inchange Semiconductor |
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| 3 | IRF054 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) PD - 90640
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number BVDSS RDS(on) IRF054 60V 0.022Ω ID 45A*
IRF054 60V, N-CHANNEL
The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transisto |
 International Rectifier |
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| 2 | IRF054 | Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) TO-204AE |
 New Jersey Semiconductor |
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| 1 | IRF054SMD | N-CHANNEL POWER MOSFET LAB
MECHANICAL DATA Dimensions in mm (inches)
SEME
IRF054SMD
N–CHANNEL POWER MOSFET
3 .6 0 (0 .1 4 2 ) M a x .
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 )
1
3
0 .7 6 (0 .0 3 0 ) m in .
VDSS ID(c |
 Seme LAB |
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