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Datasheet IPP082N10N3G Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | IPP082N10N3G | Power-Transistor www.DataSheet.co.kr
IPP086N10N3 G IPB083N10N3 G
IPI086N10N3 G IPD082N10N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS com |
Infineon Technologies |
IPP082N10 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
IPP082N10N3G | Power-Transistor |
Infineon Technologies |
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Número de pieza | Descripción | Fabricantes | |
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