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Datasheet IPP05CN10NG Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | IPP05CN10NG | Power-Transistor
IPB05CN10N G
IPI05CN10N G IPP05CN10N G
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualifi |
Infineon Technologies |
IPP05CN1 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
IPP05CN10NG | Power-Transistor |
Infineon Technologies |
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Número de pieza | Descripción | Fabricantes | |
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