IPI16CNE8NG
Infineon Technologies
Power-Transistor
IPB16CNE8N G IPI16CNE8N G
IPD16CNE8N G IPP16CNE8N G
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature