Datasheet IPI12CNE8NG Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IPI12CNE8NG	Power-Transistor IPB12CNE8N G IPI12CNE8N G IPD12CNE8N G IPP12CNE8N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS complian	Infineon Technologies

IPI12CNE Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IPI12CNE8NG	Power-Transistor IPB12CNE8N G IPI12CNE8N G IPD12CNE8N G IPP12CNE8N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead pl	Infineon Technologies

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Número de pieza	Descripción	Fabricantes	PDF
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