IPI076N12N3G
Infineon
Power-TransistorIPI076N12N3 G IPP076N12N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on)max ID
• 175 °C operating temperature
• Pb-f