IPD90N06S4-05
Infineon Technologies
Power-TransistorOptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Ultra Low RDSon
IPD90N06S4-05
P
IPD90N06S4-07
Power-TransistorOptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Ultra Low RDSon
IPD90N06S4-07
Product Summary V DS R DS(on),max ID
60
Infineon
PDF
IPD90N06S4-04
Power-TransistorOptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested
IPD90N06S4-04
Product Summary V DS R DS(on),max ID
60 V 3.8 mΩ 90 A
PG-TO252
Infineon
PDF