IPD90N04S4-03
Infineon
Power-TransistorOptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested
IPD90N04S4-03
Product Summary V DS R DS(
IPD90N04S4-05
Power-TransistorOptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested
IPD90N04S4-05
Product Summary V DS R DS(on),max ID
40 V 5.2 mΩ 86 A
PG-TO252
Infineon
PDF
IPD90N04S4-04
Power-TransistorOptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested
IPD90N04S4-04
Product Summary V DS R DS(on),max ID
40 V 4.1 mΩ 90 A
PG-TO252
Infineon Technologies
PDF
IPD90N04S4-02
Power-TransistorOptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested
IPD90N04S4-02
Product Summary V DS R DS(on),max ID
40 V 2.4 mΩ 90 A
PG-TO252
Infineon
PDF