Datasheet IPD50N04S4-10 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IPD50N04S4-10	Power Transistor OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPD50N04S4-10 Product Summary V DS R DS(on),max ID 40 V 9.3 mΩ 50 A PG-TO252	Infineon

IPD50N04S4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IPD50N04S4L-08	Power Transistor OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPD50N04S4L-08 Product Summary V DS R DS(on),max ID 40 V 7.	Infineon
IPD50N04S4-10	Power Transistor OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPD50N04S4-10 Product Summary V DS R DS(on),max ID 40 V 9.3	Infineon
IPD50N04S4-08	Power Transistor OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPD50N04S4-08 Product Summary V DS R DS(on),max ID 40 V 7.9	Infineon

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Número de pieza	Descripción	Fabricantes	PDF
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