IPB80N04S3-06
Infineon Technologies
Power-TransistorOptiMOS®-T Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested
IPB80N04S3-06 IPI80N04S3-0
IPB80N04S3-03
Power-TransistorOptiMOS®-T Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested
IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03
Infineon Technologies
PDF