IPB80N04S2-H4
Infineon Technologies
Power-TransistorIPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4
OptiMOS® Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rd
IPB80N04S2-04
Power-TransistorIPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04
OptiMOS® Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested PG-TO263
Infineon Technologies
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