IPB60R199CPA
Infineon Technologies
Power TransistorIPB60R199CPA
CoolMOS® Power Transistor
Product Summary V DS R DS(on),max Q g,typ 600 V
0.199 Ω 33 nC
Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 q
IPB60R199CP
Power TransistorCoolMOS® Power Transistor
Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant
Product Summary V DS @ Tj,max R DS(on),max Q g
Infineon Technologies
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