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IPB60R199CPA  

Infineon Technologies
Infineon Technologies

IPB60R199CPA

Power Transistor

IPB60R199CPA CoolMOS® Power Transistor Product Summary V DS R DS(on),max Q g,typ 600 V 0.199 Ω 33 nC Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 q




관련 부품 IPB60R199C 상세설명

IPB60R199CP  

  
Power Transistor

CoolMOS® Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g



Infineon Technologies
Infineon Technologies

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