Datasheet IPB60R099C6 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IPB60R099C6	MOSFET ( Transistor ) FGK@?L FTcP[ GgXST KTXR^]SdRc^a @XT[S ?UUTRc LaP]bXbc^a =^^[FGKm =6 6*M =^^[FGKm =6 H^fTa LaP]bXbc^a CHx6J099=6 >PcP KWTTc JTe( ,(,, 2014-12-02 @X]P[ H^fTa FP]PVTT]c " Fd[cXPaZTc -''H 6YYV@BEc 6- CY`O[ F[KXS]Y[ % 0BM@LEKNEJI =bb_GILo f T eXib_hgbaTel gXV[ab_bZl Ybe [Z[ ib_gTZX cbjXe GIL@?Mf& WXfZ	Infineon Technologies

IPB60R09 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IPB60R099C6	MOSFET ( Transistor ) FGK@?L FTcP[ GgXST KTXR^]SdRc^a @XT[S ?UUTRc LaP]bXbc^a =^^[FGKm =6 6*M =^^[FGKm =6 H^fTa LaP]bXbc^a CHx6J099=6 >PcP KWTTc JTe( ,(,, 2014-12-02 @X]P[ H^fTa FP]PVTT]c " Fd[cXPaZTc -''H 6YYV@BEc 6- CY`O[ F[KXS]Y[ % 0BM@LEKNEJI =bb_GILo f T eXib_hgbaTel gXV[ab_bZl Ybe [Z[ ib_gTZX	Infineon Technologies
IPB60R099CPA	Power Transistor IPB60R099CPA CoolMOS® Power Transistor Product Summary V DS R DS(on),max Q g,typ 600 0.105 60 V Ω nC Features • Worldwide best Rds,on in TO263 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified • Green pa	Infineon Technologies
IPB60R099CP	Power Transistor IPB60R099CP CoolMOSTM Power Transistor Features • Worldwide best R ds,on in TO263 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Sum	Infineon Technologies

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Número de pieza	Descripción	Fabricantes	PDF
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