IPB35CN10NG
Infineon
Power-TransistorIPB35CN10N G IPI35CN10N G IPP35CN10N G
IPD33CN10N G IPU33CN10N G
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-