IPB12CNE8NG
Infineon Technologies
Power-Transistor
IPB12CNE8N G IPI12CNE8N G
IPD12CNE8N G IPP12CNE8N G
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature