IPB123N10N3G
Infineon Technologies
Power-TransistorIPP126N10N3 G IPB123N10N3 G IPI126N10N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature
Product Summary V DS R DS(on),