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IPB107N20N3G 전자부품 데이터시트



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IPB107N20N3G  

Infineon Technologies
Infineon Technologies

IPB107N20N3G

Power-Transistor

IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID • 175 °C operatin




관련 부품 IPB107N20N 상세설명

IPB107N20NA  

  
Power-Transistor

IPB107N20NA IPP110N20NA OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant



Infineon
Infineon

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