IPB107N20N3G
Infineon Technologies
Power-TransistorIPB107N20N3 G IPP110N20N3 G IPI110N20N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO263) ID
• 175 °C operatin
IPB107N20NA
Power-TransistorIPB107N20NA IPP110N20NA
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO263) ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
Infineon
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